Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
172 A
Maximum Drain Source Voltage
60 V
Serija
StrongIRFET
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
15.87mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
5.31mm
Transistor Material
Si
Aukštis
20.7mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 25,65
€ 1,282 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 31,04
€ 1,551 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
20

€ 25,65
€ 1,282 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 31,04
€ 1,551 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
20

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
20 - 98 | € 1,282 | € 2,56 |
100 - 148 | € 1,235 | € 2,47 |
150 - 298 | € 1,235 | € 2,47 |
300+ | € 1,188 | € 2,38 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
172 A
Maximum Drain Source Voltage
60 V
Serija
StrongIRFET
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
15.87mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
5.31mm
Transistor Material
Si
Aukštis
20.7mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.