Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
4.9 A
Maximum Drain Source Voltage
30 V
Serija
HEXFET
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Ilgis
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
4mm
Transistor Material
Si
Forward Diode Voltage
1V
Aukštis
1.5mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 39,10
€ 0,391 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 47,31
€ 0,473 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
100

€ 39,10
€ 0,391 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 47,31
€ 0,473 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Ritė)
100

Sandėlio informacija laikinai nepasiekiama.
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
100 - 180 | € 0,391 | € 7,82 |
200 - 480 | € 0,362 | € 7,24 |
500 - 980 | € 0,338 | € 6,76 |
1000+ | € 0,313 | € 6,26 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
4.9 A
Maximum Drain Source Voltage
30 V
Serija
HEXFET
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Ilgis
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
4mm
Transistor Material
Si
Forward Diode Voltage
1V
Aukštis
1.5mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.