Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1

RS kodas: 168-5917Gamintojas: InfineonGamintojo kodas: IPD80R1K4P7ATMA1
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Serija

CoolMOS™ P7

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

32 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Plotis

6.22mm

Ilgis

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.9V

Aukštis

2.41mm

Kilmės šalis

China

Produkto aprašymas

Infineon CoolMOS™P7 Power MOSFET

The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Sandėlio informacija laikinai nepasiekiama.

€ 843,12

€ 0,337 Each (On a Reel of 2500) (be PVM)

€ 1 020,18

€ 0,408 Each (On a Reel of 2500) (su PVM)

Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1
sticker-462

€ 843,12

€ 0,337 Each (On a Reel of 2500) (be PVM)

€ 1 020,18

€ 0,408 Each (On a Reel of 2500) (su PVM)

Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Serija

CoolMOS™ P7

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

32 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Plotis

6.22mm

Ilgis

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.9V

Aukštis

2.41mm

Kilmės šalis

China

Produkto aprašymas

Infineon CoolMOS™P7 Power MOSFET

The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more