P-Channel MOSFET Transistor, 70 A, 30 V, 3-Pin DPAK Infineon IPD042P03L3 G
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
TO-252
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.22mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
131 nC @ 10 V
Aukštis
2.41mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Malaysia
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P.O.A.
Už kiekviena vnt. (tiekiama riteje) (be PVM)
Gamybinė pakuotė (Ritė)
5
P.O.A.
Už kiekviena vnt. (tiekiama riteje) (be PVM)
Gamybinė pakuotė (Ritė)
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
TO-252
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.22mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
131 nC @ 10 V
Aukštis
2.41mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products