Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
30 V
Serija
OptiMOS™
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
5.35mm
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Aukštis
1.1mm
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 1 555,00
€ 0,311 Each (On a Reel of 5000) (be PVM)
€ 1 881,55
€ 0,376 Each (On a Reel of 5000) (su PVM)
5000
€ 1 555,00
€ 0,311 Each (On a Reel of 5000) (be PVM)
€ 1 881,55
€ 0,376 Each (On a Reel of 5000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
5000
Sandėlio informacija laikinai nepasiekiama.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
30 V
Serija
OptiMOS™
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
5.35mm
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Aukštis
1.1mm
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products