Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1

RS kodas: 906-4381Gamintojas: InfineonGamintojo kodas: BSC010N04LSATMA1
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Serija

OptiMOS™ 5

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.35mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.1mm

Typical Gate Charge @ Vgs

95 nC @ 10V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Produkto aprašymas

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 18,05

€ 1,805 Each (In a Pack of 10) (be PVM)

€ 21,84

€ 2,184 Each (In a Pack of 10) (su PVM)

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 18,05

€ 1,805 Each (In a Pack of 10) (be PVM)

€ 21,84

€ 2,184 Each (In a Pack of 10) (su PVM)

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
10 - 40€ 1,805€ 18,05
50 - 90€ 1,71€ 17,10
100 - 240€ 1,615€ 16,15
250 - 490€ 1,568€ 15,68
500+€ 1,472€ 14,72

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Serija

OptiMOS™ 5

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.35mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.1mm

Typical Gate Charge @ Vgs

95 nC @ 10V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Produkto aprašymas

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more