Diodes Inc P-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMP2305U-7

RS kodas: 751-4256Gamintojas: DiodesZetexGamintojo kodas: DMP2305U-7
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

113 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3mm

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Sandėlio informacija laikinai nepasiekiama.

€ 7,60

€ 0,076 Each (In a Pack of 100) (be PVM)

€ 9,20

€ 0,092 Each (In a Pack of 100) (su PVM)

Diodes Inc P-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMP2305U-7
Pasirinkite pakuotės tipą
sticker-462

€ 7,60

€ 0,076 Each (In a Pack of 100) (be PVM)

€ 9,20

€ 0,092 Each (In a Pack of 100) (su PVM)

Diodes Inc P-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMP2305U-7
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
100 - 500€ 0,076€ 7,60
600 - 1400€ 0,072€ 7,22
1500+€ 0,06€ 5,98

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

113 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3mm

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more