Diodes Inc P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 DMP2006UFG-7
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
PowerDI3333-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Plotis
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.35mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
0.8mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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€ 11,95
€ 0,598 Each (In a Pack of 20) (be PVM)
€ 14,46
€ 0,723 Each (In a Pack of 20) (su PVM)
Standartas
20
€ 11,95
€ 0,598 Each (In a Pack of 20) (be PVM)
€ 14,46
€ 0,723 Each (In a Pack of 20) (su PVM)
Standartas
20
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 20 - 80 | € 0,598 | € 11,95 |
| 100 - 480 | € 0,417 | € 8,34 |
| 500 - 980 | € 0,374 | € 7,49 |
| 1000 - 2480 | € 0,334 | € 6,69 |
| 2500+ | € 0,30 | € 6,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
PowerDI3333-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Plotis
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.35mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
0.8mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products