Diodes Inc N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 DMN10H220L-7
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Plotis
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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€ 9,89
€ 0,33 Each (In a Pack of 30) (be PVM)
€ 11,97
€ 0,399 Each (In a Pack of 30) (su PVM)
Standartas
30
€ 9,89
€ 0,33 Each (In a Pack of 30) (be PVM)
€ 11,97
€ 0,399 Each (In a Pack of 30) (su PVM)
Standartas
30
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 30 - 120 | € 0,33 | € 9,89 |
| 150 - 420 | € 0,291 | € 8,72 |
| 450 - 870 | € 0,28 | € 8,41 |
| 900 - 2970 | € 0,276 | € 8,26 |
| 3000+ | € 0,268 | € 8,04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Plotis
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products