Techniniai dokumentai
Specifikacijos
Markė
ams OSRAMSpectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
8µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
150 °
Polarity
NPN
Number of Pins
2
Tvirtinimo tipas
Through Hole
Pakuotės tipas
3mm (T-1)
Matmenys
4 x 4 x 3.1mm
Collector Current
20mA
Maximum Wavelength Detected
940nm
Spectral Range of Sensitivity
350 → 940 nm
Minimum Wavelength Detected
350nm
Ilgis
4mm
Plotis
4mm
Aukštis
3.1mm
Produkto aprašymas
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.
Ambient Light Sensors, OSRAM Opto Semiconductors
€ 6,00
€ 1,20 Each (In a Pack of 5) (be PVM)
€ 7,26
€ 1,452 Each (In a Pack of 5) (su PVM)
Standartas
5

€ 6,00
€ 1,20 Each (In a Pack of 5) (be PVM)
€ 7,26
€ 1,452 Each (In a Pack of 5) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
5

Sandėlio informacija laikinai nepasiekiama.
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 15 | € 1,20 | € 6,00 |
20 - 95 | € 0,959 | € 4,80 |
100 - 495 | € 0,67 | € 3,35 |
500 - 995 | € 0,508 | € 2,54 |
1000+ | € 0,42 | € 2,10 |
Techniniai dokumentai
Specifikacijos
Markė
ams OSRAMSpectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
8µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
150 °
Polarity
NPN
Number of Pins
2
Tvirtinimo tipas
Through Hole
Pakuotės tipas
3mm (T-1)
Matmenys
4 x 4 x 3.1mm
Collector Current
20mA
Maximum Wavelength Detected
940nm
Spectral Range of Sensitivity
350 → 940 nm
Minimum Wavelength Detected
350nm
Ilgis
4mm
Plotis
4mm
Aukštis
3.1mm
Produkto aprašymas
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.