Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3

RS kodas: 787-9222PGamintojas: VishayGamintojo kodas: SI2333DDS-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

19 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.04mm

Typical Gate Charge @ Vgs

23 nC @ 8 V

Maksimali darbinė temperatūra

+150 °C

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.02mm

Produkto aprašymas

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Galbūt jus domina
P-Channel MOSFET Transistor, 3 A, 12 V, 3-Pin SOT-23 Vishay SI2315BDS-T1-E3
P.O.A.Už kiekviena vnt. (tiekiama riteje) (be PVM)
P-Channel MOSFET Transistor, 4.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333DS-T1-E3
P.O.A.Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 37,90

€ 0,379 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 45,86

€ 0,459 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 37,90

€ 0,379 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 45,86

€ 0,459 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

kiekisVieneto kainaPer Ritė
100 - 490€ 0,379€ 3,79
500 - 990€ 0,344€ 3,44
1000 - 2490€ 0,323€ 3,23
2500+€ 0,303€ 3,03

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
P-Channel MOSFET Transistor, 3 A, 12 V, 3-Pin SOT-23 Vishay SI2315BDS-T1-E3
P.O.A.Už kiekviena vnt. (tiekiama riteje) (be PVM)
P-Channel MOSFET Transistor, 4.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333DS-T1-E3
P.O.A.Už kiekviena vnt. (tiekiama riteje) (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

19 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.04mm

Typical Gate Charge @ Vgs

23 nC @ 8 V

Maksimali darbinė temperatūra

+150 °C

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.02mm

Produkto aprašymas

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
P-Channel MOSFET Transistor, 3 A, 12 V, 3-Pin SOT-23 Vishay SI2315BDS-T1-E3
P.O.A.Už kiekviena vnt. (tiekiama riteje) (be PVM)
P-Channel MOSFET Transistor, 4.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333DS-T1-E3
P.O.A.Už kiekviena vnt. (tiekiama riteje) (be PVM)