Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3

RS kodas: 178-3687Gamintojas: Vishay SiliconixGamintojo kodas: SiR188DP-T1-RE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PowerPAK SO-8

Serija

TrenchFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

3.6V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Plotis

5mm

Ilgis

5.99mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

1.07mm

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

€ 1 858,20

€ 0,619 Each (On a Reel of 3000) (be PVM)

€ 2 248,42

€ 0,749 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3
sticker-462

€ 1 858,20

€ 0,619 Each (On a Reel of 3000) (be PVM)

€ 2 248,42

€ 0,749 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PowerPAK SO-8

Serija

TrenchFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

3.6V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Plotis

5mm

Ilgis

5.99mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

1.07mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more