STMicroelectronics STripFET F3 N-Channel MOSFET, 80 A, 55 V, 3-Pin DPAK STD65N55F3
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Serija
STripFET F3
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.6mm
Typical Gate Charge @ Vgs
33.5 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 11,40
€ 2,28 Each (In a Pack of 5) (be PVM)
€ 13,79
€ 2,759 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 11,40
€ 2,28 Each (In a Pack of 5) (be PVM)
€ 13,79
€ 2,759 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 2,28 | € 11,40 |
| 25 - 45 | € 2,185 | € 10,92 |
| 50 - 120 | € 1,948 | € 9,74 |
| 125 - 245 | € 1,758 | € 8,79 |
| 250+ | € 1,662 | € 8,31 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Serija
STripFET F3
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.6mm
Typical Gate Charge @ Vgs
33.5 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products