Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
460 mA, 680 mA
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
1.1 Ω, 450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
900 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V, 1.64 nC @ 4.5 V
Plotis
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
3mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 0,64
€ 0,64 už 1 vnt. (be PVM)
€ 0,77
€ 0,77 už 1 vnt. (su PVM)
Standartas
1

€ 0,64
€ 0,64 už 1 vnt. (be PVM)
€ 0,77
€ 0,77 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
1

Sandėlio informacija laikinai nepasiekiama.
kiekis | Vieneto kaina |
---|---|
1 - 9 | € 0,64 |
10 - 99 | € 0,54 |
100 - 499 | € 0,47 |
500 - 999 | € 0,42 |
1000+ | € 0,38 |
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
460 mA, 680 mA
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
1.1 Ω, 450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
900 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V, 1.64 nC @ 4.5 V
Plotis
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
3mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.