Nexperia PBSS4350T,215 NPN Transistor, 2 A, 50 V, 3-Pin SOT-23
Techniniai dokumentai
Specifikacijos
Markė
NexperiaTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
50 V
Pakuotės tipas
SOT-23 (TO-236AB)
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
1.2 W
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
1 x 3 x 1.4mm
Kilmės šalis
China
Produkto aprašymas
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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€ 245,10
€ 0,082 Each (On a Reel of 3000) (be PVM)
€ 296,57
€ 0,099 Each (On a Reel of 3000) (su PVM)
3000
€ 245,10
€ 0,082 Each (On a Reel of 3000) (be PVM)
€ 296,57
€ 0,099 Each (On a Reel of 3000) (su PVM)
3000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NexperiaTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
50 V
Pakuotės tipas
SOT-23 (TO-236AB)
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
1.2 W
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
1 x 3 x 1.4mm
Kilmės šalis
China
Produkto aprašymas
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products