Nexperia N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 BSS138P,215
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
3mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Plotis
1.4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 5,04
€ 0,05 Each (On a Reel of 100) (be PVM)
€ 6,10
€ 0,061 Each (On a Reel of 100) (su PVM)
Standartas
100
€ 5,04
€ 0,05 Each (On a Reel of 100) (be PVM)
€ 6,10
€ 0,061 Each (On a Reel of 100) (su PVM)
Standartas
100
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 100 - 100 | € 0,05 | € 5,04 |
| 200 - 400 | € 0,049 | € 4,94 |
| 500 - 900 | € 0,032 | € 3,23 |
| 1000 - 1900 | € 0,03 | € 3,04 |
| 2000+ | € 0,026 | € 2,56 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
3mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Plotis
1.4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products