Infineon CoolMOS™ C3 N-Channel MOSFET, 6 A, 800 V, 3-Pin TO-220 SPP06N80C3XKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Serija
CoolMOS™ C3
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.36mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
15.95mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 70,00
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 84,70
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
50
€ 70,00
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 84,70
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Vamzdelis)
50
Sandėlio informacija laikinai nepasiekiama.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Serija
CoolMOS™ C3
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.36mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
15.95mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products