Diodes Inc N-Channel MOSFET, 270 mA, 60 V, 3-Pin E-Line VN10LP
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
270 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
E-Line
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
4.77mm
Maksimali darbinė temperatūra
+150 °C
Aukštis
4.01mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 4,51
€ 0,902 Each (In a Pack of 5) (be PVM)
€ 5,46
€ 1,091 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 4,51
€ 0,902 Each (In a Pack of 5) (be PVM)
€ 5,46
€ 1,091 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 0,902 | € 4,51 |
| 50 - 195 | € 0,533 | € 2,66 |
| 200 - 995 | € 0,467 | € 2,34 |
| 1000 - 1995 | € 0,397 | € 1,99 |
| 2000+ | € 0,334 | € 1,67 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
270 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
E-Line
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
4.77mm
Maksimali darbinė temperatūra
+150 °C
Aukštis
4.01mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products