Wolfspeed SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK C2M1000170J
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Plotis
10.99mm
Transistor Material
SiC
Number of Elements per Chip
1
Ilgis
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
4.57mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.8V
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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€ 18,62
€ 9,31 Each (In a Pack of 2) (be PVM)
€ 22,53
€ 11,265 Each (In a Pack of 2) (su PVM)
Standartas
2
€ 18,62
€ 9,31 Each (In a Pack of 2) (be PVM)
€ 22,53
€ 11,265 Each (In a Pack of 2) (su PVM)
Standartas
2
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 8 | € 9,31 | € 18,62 |
| 10 - 18 | € 8,74 | € 17,48 |
| 20 - 48 | € 8,455 | € 16,91 |
| 50 - 98 | € 8,265 | € 16,53 |
| 100+ | € 8,075 | € 16,15 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Plotis
10.99mm
Transistor Material
SiC
Number of Elements per Chip
1
Ilgis
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
4.57mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.8V
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products