Wolfspeed SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 C2M0040120D
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Plotis
5.21mm
Transistor Material
SiC
Number of Elements per Chip
1
Ilgis
16.13mm
Typical Gate Charge @ Vgs
115 nC @ 20 V, 115 nC @ 5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
21.1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.3V
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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€ 49,88
€ 49,88 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 60,35
€ 60,35 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
1
€ 49,88
€ 49,88 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 60,35
€ 60,35 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Plotis
5.21mm
Transistor Material
SiC
Number of Elements per Chip
1
Ilgis
16.13mm
Typical Gate Charge @ Vgs
115 nC @ 20 V, 115 nC @ 5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
21.1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.3V
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products