Vishay P-Channel MOSFET, 3.8 A, 60 V, 8-Pin SOIC SI9407BDY-T1-GE3

RS kodas: 165-6283Gamintojas: VishayGamintojo kodas: SI9407BDY-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

4mm

Ilgis

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.55mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 972,50

€ 0,389 Each (On a Reel of 2500) (be PVM)

€ 1 176,72

€ 0,471 Each (On a Reel of 2500) (su PVM)

Vishay P-Channel MOSFET, 3.8 A, 60 V, 8-Pin SOIC SI9407BDY-T1-GE3
sticker-462

€ 972,50

€ 0,389 Each (On a Reel of 2500) (be PVM)

€ 1 176,72

€ 0,471 Each (On a Reel of 2500) (su PVM)

Vishay P-Channel MOSFET, 3.8 A, 60 V, 8-Pin SOIC SI9407BDY-T1-GE3

Sandėlio informacija laikinai nepasiekiama.

sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

4mm

Ilgis

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.55mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more