Vishay P-Channel MOSFET, 3.1 A, 100 V, 3-Pin IPAK IRFU9110PBF

RS kodas: 541-1663Gamintojas: VishayGamintojo kodas: IRFU9110PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.7 nC @ 10 V

Plotis

2.38mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.73mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

6.22mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 1,19

€ 1,19 už 1 vnt. (be PVM)

€ 1,44

€ 1,44 už 1 vnt. (su PVM)

Vishay P-Channel MOSFET, 3.1 A, 100 V, 3-Pin IPAK IRFU9110PBF
sticker-462

€ 1,19

€ 1,19 už 1 vnt. (be PVM)

€ 1,44

€ 1,44 už 1 vnt. (su PVM)

Vishay P-Channel MOSFET, 3.1 A, 100 V, 3-Pin IPAK IRFU9110PBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kaina
1 - 9€ 1,19
10 - 49€ 1,09
50 - 99€ 1,04
100 - 249€ 0,90
250+€ 0,83

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.7 nC @ 10 V

Plotis

2.38mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.73mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

6.22mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more