Vishay P-Channel MOSFET, 19 A, 100 V, 3-Pin TO-220AB IRF9540PBF

RS kodas: 708-5152Gamintojas: VishayGamintojo kodas: IRF9540PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

61 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+175 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Pwr MOSFET, -100V Single P-Ch. HEXFET; TO-220AB
P.O.A.už 1 vnt. (be PVM)
Sandėlio informacija laikinai nepasiekiama.

€ 8,08

€ 1,615 Each (In a Pack of 5) (be PVM)

€ 9,78

€ 1,954 Each (In a Pack of 5) (su PVM)

Vishay P-Channel MOSFET, 19 A, 100 V, 3-Pin TO-220AB IRF9540PBF
Pasirinkite pakuotės tipą
sticker-462

€ 8,08

€ 1,615 Each (In a Pack of 5) (be PVM)

€ 9,78

€ 1,954 Each (In a Pack of 5) (su PVM)

Vishay P-Channel MOSFET, 19 A, 100 V, 3-Pin TO-220AB IRF9540PBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
5 - 45€ 1,615€ 8,08
50 - 120€ 1,378€ 6,89
125 - 245€ 1,282€ 6,41
250 - 495€ 1,188€ 5,94
500+€ 1,14€ 5,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Pwr MOSFET, -100V Single P-Ch. HEXFET; TO-220AB
P.O.A.už 1 vnt. (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

61 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+175 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Pwr MOSFET, -100V Single P-Ch. HEXFET; TO-220AB
P.O.A.už 1 vnt. (be PVM)