Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 SQS944ENW-T1_GE3

RS kodas: 178-3726Gamintojas: Vishay SiliconixGamintojo kodas: SQS944ENW-T1_GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

40 V

Serija

TrenchFET

Pakuotės tipas

PowerPAK 1212-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Plotis

3.15mm

Ilgis

3.15mm

Typical Gate Charge @ Vgs

11.5 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Aukštis

1.07mm

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

€ 1 003,20

€ 0,334 Each (On a Reel of 3000) (be PVM)

€ 1 213,87

€ 0,404 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 SQS944ENW-T1_GE3
sticker-462

€ 1 003,20

€ 0,334 Each (On a Reel of 3000) (be PVM)

€ 1 213,87

€ 0,404 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 SQS944ENW-T1_GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

40 V

Serija

TrenchFET

Pakuotės tipas

PowerPAK 1212-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Plotis

3.15mm

Ilgis

3.15mm

Typical Gate Charge @ Vgs

11.5 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Aukštis

1.07mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more