Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3

RS kodas: 178-3667Gamintojas: Vishay SiliconixGamintojo kodas: SiA106DJ-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Serija

TrenchFET

Pakuotės tipas

SC-70-6L

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Ilgis

2.2mm

Number of Elements per Chip

1

Plotis

1.35mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Aukštis

1mm

Forward Diode Voltage

1.2V

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

€ 991,80

€ 0,331 Each (On a Reel of 3000) (be PVM)

€ 1 200,08

€ 0,40 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3
sticker-462

€ 991,80

€ 0,331 Each (On a Reel of 3000) (be PVM)

€ 1 200,08

€ 0,40 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Serija

TrenchFET

Pakuotės tipas

SC-70-6L

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Ilgis

2.2mm

Number of Elements per Chip

1

Plotis

1.35mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Aukštis

1mm

Forward Diode Voltage

1.2V

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more