Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R

RS kodas: 171-2471Gamintojas: ToshibaGamintojo kodas: SSM3K339R
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Plotis

1.8mm

Ilgis

2.9mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Maksimali darbinė temperatūra

+150 °C

Forward Diode Voltage

1.2V

Aukštis

0.7mm

Kilmės šalis

Thailand

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Sandėlio informacija laikinai nepasiekiama.

€ 7,36

€ 0,147 Each (In a Pack of 50) (be PVM)

€ 8,91

€ 0,178 Each (In a Pack of 50) (su PVM)

Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R
Pasirinkite pakuotės tipą
sticker-462

€ 7,36

€ 0,147 Each (In a Pack of 50) (be PVM)

€ 8,91

€ 0,178 Each (In a Pack of 50) (su PVM)

Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
50 - 100€ 0,147€ 7,36
150 - 450€ 0,124€ 6,18
500 - 950€ 0,105€ 5,27
1000+€ 0,091€ 4,56

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Plotis

1.8mm

Ilgis

2.9mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Maksimali darbinė temperatūra

+150 °C

Forward Diode Voltage

1.2V

Aukštis

0.7mm

Kilmės šalis

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more