Texas Instruments P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T

RS kodas: 133-0156PGamintojas: Texas InstrumentsGamintojo kodas: CSD25404Q3T
Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

104 A

Maximum Drain Source Voltage

20 V

Serija

NexFET

Pakuotės tipas

VSON-CLIP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

3.4mm

Number of Elements per Chip

1

Ilgis

3.4mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Produkto aprašymas

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Sandėlio informacija laikinai nepasiekiama.

€ 3,07

€ 0,614 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 3,71

€ 0,743 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Texas Instruments P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
Pasirinkite pakuotės tipą
sticker-462

€ 3,07

€ 0,614 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 3,71

€ 0,743 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Texas Instruments P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

104 A

Maximum Drain Source Voltage

20 V

Serija

NexFET

Pakuotės tipas

VSON-CLIP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

3.4mm

Number of Elements per Chip

1

Ilgis

3.4mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Produkto aprašymas

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more