STMicroelectronics STripFET N-Channel MOSFET, 50 A, 100 V, 3-Pin TO-220 STP40NF10
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220
Serija
STripFET
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.4mm
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Plotis
4.6mm
Transistor Material
Si
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 16,15
€ 1,615 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 19,54
€ 1,954 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
10
€ 16,15
€ 1,615 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 19,54
€ 1,954 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 10 - 95 | € 1,615 | € 8,08 |
| 100 - 495 | € 1,235 | € 6,18 |
| 500 - 995 | € 1,045 | € 5,22 |
| 1000+ | € 0,876 | € 4,38 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220
Serija
STripFET
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.4mm
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Plotis
4.6mm
Transistor Material
Si
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products