Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maksimali darbinė temperatūra
+150 °C
Plotis
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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€ 15,25
€ 0,508 Each (In a Pack of 30) (be PVM)
€ 18,45
€ 0,615 Each (In a Pack of 30) (su PVM)
Standartas
30
€ 15,25
€ 0,508 Each (In a Pack of 30) (be PVM)
€ 18,45
€ 0,615 Each (In a Pack of 30) (su PVM)
Standartas
30
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 30 - 30 | € 0,508 | € 15,25 |
| 60 - 120 | € 0,483 | € 14,48 |
| 150 - 270 | € 0,305 | € 9,15 |
| 300 - 570 | € 0,238 | € 7,12 |
| 600+ | € 0,186 | € 5,59 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maksimali darbinė temperatūra
+150 °C
Plotis
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products