N-Channel MOSFET, 46 A, 250 V, 3-Pin TO-220AB Infineon IRFB4229PBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
250 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.66mm
Transistor Material
Si
Plotis
4.82mm
Aukštis
9.02mm
Serija
HEXFET
Minimali darbinė temperatūra
-40 °C
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 3,18
€ 3,18 už 1 vnt. (be PVM)
€ 3,85
€ 3,85 už 1 vnt. (su PVM)
1
€ 3,18
€ 3,18 už 1 vnt. (be PVM)
€ 3,85
€ 3,85 už 1 vnt. (su PVM)
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 1 - 4 | € 3,18 |
| 5 - 9 | € 2,28 |
| 10 - 19 | € 2,09 |
| 20 - 49 | € 1,95 |
| 50+ | € 1,90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
250 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.66mm
Transistor Material
Si
Plotis
4.82mm
Aukštis
9.02mm
Serija
HEXFET
Minimali darbinė temperatūra
-40 °C
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products