Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
55 V
Pakuotės tipas
I2PAK (TO-262)
Serija
HEXFET
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.67mm
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
180 nC @ 10 V
Plotis
4.83mm
Transistor Material
Si
Aukštis
10.54mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Produkto aprašymas
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 8,75
€ 1,75 Each (In a Pack of 5) (be PVM)
€ 10,59
€ 2,118 Each (In a Pack of 5) (su PVM)
Standartas
5

€ 8,75
€ 1,75 Each (In a Pack of 5) (be PVM)
€ 10,59
€ 2,118 Each (In a Pack of 5) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
5

Sandėlio informacija laikinai nepasiekiama.
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 20 | € 1,75 | € 8,75 |
25 - 45 | € 1,40 | € 7,00 |
50 - 120 | € 1,35 | € 6,75 |
125 - 245 | € 1,25 | € 6,25 |
250+ | € 1,15 | € 5,75 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
55 V
Pakuotės tipas
I2PAK (TO-262)
Serija
HEXFET
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.67mm
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
180 nC @ 10 V
Plotis
4.83mm
Transistor Material
Si
Aukštis
10.54mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Produkto aprašymas
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.