Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
100 V
Serija
OptiMOS™ 2
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
15.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.57mm
Ilgis
10.36mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Aukštis
15.95mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 61,75
€ 1,235 Each (In a Tube of 50) (be PVM)
€ 74,72
€ 1,494 Each (In a Tube of 50) (su PVM)
50

€ 61,75
€ 1,235 Each (In a Tube of 50) (be PVM)
€ 74,72
€ 1,494 Each (In a Tube of 50) (su PVM)
50

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
50 - 50 | € 1,235 | € 61,75 |
100 - 200 | € 0,998 | € 49,88 |
250 - 450 | € 0,998 | € 49,88 |
500 - 950 | € 0,95 | € 47,50 |
1000+ | € 0,936 | € 46,79 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
100 V
Serija
OptiMOS™ 2
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
15.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.57mm
Ilgis
10.36mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Aukštis
15.95mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.