Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
300 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1600 W
Configuration
Series
Pakuotės tipas
62MM Module
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Transistor Configuration
Series
Matmenys
106.4 x 61.4 x 30.9mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 258,40
€ 129,20 Už kiekviena vnt. (tiekiama dežeje) (be PVM)
€ 312,66
€ 156,33 Už kiekviena vnt. (tiekiama dežeje) (su PVM)
Gamybinė pakuotė (Dėžutė)
2

€ 258,40
€ 129,20 Už kiekviena vnt. (tiekiama dežeje) (be PVM)
€ 312,66
€ 156,33 Už kiekviena vnt. (tiekiama dežeje) (su PVM)
Gamybinė pakuotė (Dėžutė)
2

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina |
---|---|
2 - 4 | € 129,20 |
5+ | € 123,50 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
300 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1600 W
Configuration
Series
Pakuotės tipas
62MM Module
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Transistor Configuration
Series
Matmenys
106.4 x 61.4 x 30.9mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.