Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
1.17 A
Maximum Drain Source Voltage
60 V
Serija
SIPMOS®
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.5mm
Typical Gate Charge @ Vgs
5.2 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 54,15
€ 0,542 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 65,52
€ 0,656 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
100

€ 54,15
€ 0,542 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 65,52
€ 0,656 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
100

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
100 - 200 | € 0,542 | € 27,08 |
250 - 450 | € 0,506 | € 25,32 |
500 - 1200 | € 0,471 | € 23,56 |
1250+ | € 0,436 | € 21,80 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
1.17 A
Maximum Drain Source Voltage
60 V
Serija
SIPMOS®
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.5mm
Typical Gate Charge @ Vgs
5.2 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.