Diodes Inc N-Channel MOSFET, 500 mA, 12 V, 3-Pin X2-DFN0806 DMN1260UFA-7B

RS kodas: 921-1057Gamintojas: DiodesZetexGamintojo kodas: DMN1260UFA-7B
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

12 V

Pakuotės tipas

X2-DFN0806

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

0.85mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

0.65mm

Typical Gate Charge @ Vgs

0.96 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.35mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Sandėlio informacija laikinai nepasiekiama.

€ 15,77

€ 0,158 Each (In a Pack of 100) (be PVM)

€ 19,08

€ 0,191 Each (In a Pack of 100) (su PVM)

Diodes Inc N-Channel MOSFET, 500 mA, 12 V, 3-Pin X2-DFN0806 DMN1260UFA-7B
Pasirinkite pakuotės tipą
sticker-462

€ 15,77

€ 0,158 Each (In a Pack of 100) (be PVM)

€ 19,08

€ 0,191 Each (In a Pack of 100) (su PVM)

Diodes Inc N-Channel MOSFET, 500 mA, 12 V, 3-Pin X2-DFN0806 DMN1260UFA-7B
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

12 V

Pakuotės tipas

X2-DFN0806

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

0.85mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

0.65mm

Typical Gate Charge @ Vgs

0.96 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.35mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more