Vishay Siliconix N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3

RS kodas: 178-3708Gamintojas: Vishay SiliconixGamintojo kodas: SQ2364EES-T1_GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Serija

TrenchFET

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

€ 735,30

€ 0,245 Each (On a Reel of 3000) (be PVM)

€ 889,71

€ 0,296 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3
sticker-462

€ 735,30

€ 0,245 Each (On a Reel of 3000) (be PVM)

€ 889,71

€ 0,296 Each (On a Reel of 3000) (su PVM)

Vishay Siliconix N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Serija

TrenchFET

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more