Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 SiSS12DN-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK 1212-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Number of Elements per Chip
1
Plotis
3.15mm
Ilgis
3.15mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Aukštis
1.07mm
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 1 353,75
€ 0,451 Each (On a Reel of 3000) (be PVM)
€ 1 638,04
€ 0,546 Each (On a Reel of 3000) (su PVM)
3000
€ 1 353,75
€ 0,451 Each (On a Reel of 3000) (be PVM)
€ 1 638,04
€ 0,546 Each (On a Reel of 3000) (su PVM)
3000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK 1212-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Number of Elements per Chip
1
Plotis
3.15mm
Ilgis
3.15mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Aukštis
1.07mm
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products