STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2.5 A, 800 V, 3-Pin TO-220 STP3N80K5
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Serija
MDmesh K5, SuperMESH5
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
15.75mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 9,25
€ 1,85 Each (In a Pack of 5) (be PVM)
€ 11,19
€ 2,238 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 9,25
€ 1,85 Each (In a Pack of 5) (be PVM)
€ 11,19
€ 2,238 Each (In a Pack of 5) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 1,85 | € 9,25 |
| 25 - 45 | € 1,75 | € 8,75 |
| 50 - 120 | € 1,60 | € 8,00 |
| 125 - 245 | € 1,40 | € 7,00 |
| 250+ | € 1,35 | € 6,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Serija
MDmesh K5, SuperMESH5
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
15.75mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products