STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB80NF10T4
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
D2PAK (TO-263)
Serija
STripFET II
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.4mm
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
135 nC @ 10 V
Plotis
9.35mm
Transistor Material
Si
Aukštis
4.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 2,18
€ 1,092 Each (In a Pack of 2) (be PVM)
€ 2,64
€ 1,321 Each (In a Pack of 2) (su PVM)
Standartas
2
€ 2,18
€ 1,092 Each (In a Pack of 2) (be PVM)
€ 2,64
€ 1,321 Each (In a Pack of 2) (su PVM)
Standartas
2
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
D2PAK (TO-263)
Serija
STripFET II
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.4mm
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
135 nC @ 10 V
Plotis
9.35mm
Transistor Material
Si
Aukštis
4.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products