Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
8
Matmenys
4.97 x 3.98 x 1.48mm
Ilgis
4.97mm
Maximum Operating Supply Voltage
3.65 V
Plotis
3.98mm
Aukštis
1.48mm
Maksimali darbinė temperatūra
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
2K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2.7 V
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 18,00
€ 1,20 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 21,78
€ 1,452 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
15

€ 18,00
€ 1,20 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 21,78
€ 1,452 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Vamzdelis)
15

Sandėlio informacija laikinai nepasiekiama.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
15 - 25 | € 1,20 | € 6,00 |
30 - 95 | € 1,15 | € 5,75 |
100 - 495 | € 1,05 | € 5,25 |
500+ | € 0,999 | € 5,00 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
8
Matmenys
4.97 x 3.98 x 1.48mm
Ilgis
4.97mm
Maximum Operating Supply Voltage
3.65 V
Plotis
3.98mm
Aukštis
1.48mm
Maksimali darbinė temperatūra
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
2K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2.7 V
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.