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Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3

RS kodas: 178-3715Gamintojas: Vishay SiliconixGamintojo kodas: SQD40031EL_GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Serija

TrenchFET

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

2.38mm

Ilgis

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Aukštis

6.22mm

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Sandėlio informacija laikinai nepasiekiama.

€ 1 573,20

€ 0,787 Each (On a Reel of 2000) (be PVM)

€ 1 903,57

€ 0,952 Each (On a Reel of 2000) (su PVM)

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3
sticker-462

€ 1 573,20

€ 0,787 Each (On a Reel of 2000) (be PVM)

€ 1 903,57

€ 0,952 Each (On a Reel of 2000) (su PVM)

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Serija

TrenchFET

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

2.38mm

Ilgis

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Aukštis

6.22mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more