STMicroelectronics N-Channel MOSFET, 130 A, 710 V, 3-Pin Max247 STY139N65M5
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
710 V
Serija
MDmesh M5
Pakuotės tipas
Max247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
15.9mm
Typical Gate Charge @ Vgs
363 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
20.3mm
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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€ 65,17
€ 32,58 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 78,86
€ 39,42 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
2
€ 65,17
€ 32,58 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 78,86
€ 39,42 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
2
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 2 - 4 | € 32,58 |
| 5+ | € 29,26 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
710 V
Serija
MDmesh M5
Pakuotės tipas
Max247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
15.9mm
Typical Gate Charge @ Vgs
363 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
20.3mm
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products