STMicroelectronics N-Channel MOSFET, 400 mA, 600 V, 3-Pin SOT-223 STN1HNK60
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Serija
MDmesh, SuperMESH
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
7 nC @ 10 V
Transistor Material
Si
Plotis
3.5mm
Number of Elements per Chip
1
Ilgis
6.5mm
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.8mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 8,65
€ 0,865 Each (In a Pack of 10) (be PVM)
€ 10,47
€ 1,047 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 8,65
€ 0,865 Each (In a Pack of 10) (be PVM)
€ 10,47
€ 1,047 Each (In a Pack of 10) (su PVM)
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 20 | € 0,865 | € 8,65 |
| 30 - 90 | € 0,82 | € 8,20 |
| 100 - 490 | € 0,617 | € 6,17 |
| 500 - 990 | € 0,523 | € 5,23 |
| 1000+ | € 0,42 | € 4,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Serija
MDmesh, SuperMESH
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
7 nC @ 10 V
Transistor Material
Si
Plotis
3.5mm
Number of Elements per Chip
1
Ilgis
6.5mm
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.8mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products