STMicroelectronics N-Channel MOSFET, 20 A, 125 V, 4-Pin M174 SD2931-10W
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Pakuotės tipas
M174
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
26.67mm
Maksimali darbinė temperatūra
+200 °C
Aukštis
4.11mm
Produkto aprašymas
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 79,80
€ 79,80 už 1 vnt. (be PVM)
€ 96,56
€ 96,56 už 1 vnt. (su PVM)
Standartas
1
€ 79,80
€ 79,80 už 1 vnt. (be PVM)
€ 96,56
€ 96,56 už 1 vnt. (su PVM)
Standartas
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 1 - 4 | € 79,80 |
| 5 - 9 | € 78,38 |
| 10+ | € 76,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Pakuotės tipas
M174
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
26.67mm
Maksimali darbinė temperatūra
+200 °C
Aukštis
4.11mm
Produkto aprašymas
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products