STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 4-Pin HiP247-4 SCT027W65G3-4AG
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
650 V
Serija
SCT
Pakuotės tipas
HiP247-4
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Kilmės šalis
China
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P.O.A.
Each (In a Tube of 30) (be PVM)
30
P.O.A.
Each (In a Tube of 30) (be PVM)
30
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
650 V
Serija
SCT
Pakuotės tipas
HiP247-4
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products