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onsemi N-Channel MOSFET, 50 A, 60 V, 5-Pin DFN NTMFS5C673NLT1G

RS kodas: 163-0290Gamintojas: onsemiGamintojo kodas: NTMFS5C673NLT1G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

5

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

6.1mm

Ilgis

5.1mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.05mm

Kilmės šalis

Malaysia

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 524,40

€ 0,35 Each (On a Reel of 1500) (be PVM)

€ 634,52

€ 0,423 Each (On a Reel of 1500) (su PVM)

onsemi N-Channel MOSFET, 50 A, 60 V, 5-Pin DFN NTMFS5C673NLT1G
sticker-462

€ 524,40

€ 0,35 Each (On a Reel of 1500) (be PVM)

€ 634,52

€ 0,423 Each (On a Reel of 1500) (su PVM)

onsemi N-Channel MOSFET, 50 A, 60 V, 5-Pin DFN NTMFS5C673NLT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

5

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

6.1mm

Ilgis

5.1mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.05mm

Kilmės šalis

Malaysia

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more