IXYS Linear L2 N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
178 A
Maximum Drain Source Voltage
100 V
Serija
Linear L2
Pakuotės tipas
SOT-227
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
830 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
25.07mm
Ilgis
38.23mm
Typical Gate Charge @ Vgs
540 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
9.6mm
Kilmės šalis
Philippines
Produkto aprašymas
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 517,75
€ 51,775 Each (In a Tube of 10) (be PVM)
€ 626,48
€ 62,648 Each (In a Tube of 10) (su PVM)
10
€ 517,75
€ 51,775 Each (In a Tube of 10) (be PVM)
€ 626,48
€ 62,648 Each (In a Tube of 10) (su PVM)
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
178 A
Maximum Drain Source Voltage
100 V
Serija
Linear L2
Pakuotės tipas
SOT-227
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
830 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
25.07mm
Ilgis
38.23mm
Typical Gate Charge @ Vgs
540 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
9.6mm
Kilmės šalis
Philippines
Produkto aprašymas
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products