IXYS HiperFET, Polar N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
150 V
Serija
HiperFET, Polar
Pakuotės tipas
TO-247AD
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
600 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
5.3mm
Ilgis
16.26mm
Typical Gate Charge @ Vgs
150 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
21.46mm
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 225,15
€ 7,505 Each (In a Tube of 30) (be PVM)
€ 272,43
€ 9,081 Each (In a Tube of 30) (su PVM)
30
€ 225,15
€ 7,505 Each (In a Tube of 30) (be PVM)
€ 272,43
€ 9,081 Each (In a Tube of 30) (su PVM)
30
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
150 V
Serija
HiperFET, Polar
Pakuotės tipas
TO-247AD
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
600 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
5.3mm
Ilgis
16.26mm
Typical Gate Charge @ Vgs
150 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
21.46mm
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products