Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Serija
CoolMOS™ P6
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Ilgis
16.13mm
Plotis
5.21mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Forward Diode Voltage
0.9V
Aukštis
21.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 17,10
€ 3,42 Each (In a Pack of 5) (be PVM)
€ 20,69
€ 4,138 Each (In a Pack of 5) (su PVM)
Standartas
5

€ 17,10
€ 3,42 Each (In a Pack of 5) (be PVM)
€ 20,69
€ 4,138 Each (In a Pack of 5) (su PVM)
Standartas
5

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 20 | € 3,42 | € 17,10 |
25 - 45 | € 2,755 | € 13,78 |
50 - 120 | € 2,518 | € 12,59 |
125 - 245 | € 2,375 | € 11,88 |
250+ | € 2,185 | € 10,92 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Serija
CoolMOS™ P6
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Ilgis
16.13mm
Plotis
5.21mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Forward Diode Voltage
0.9V
Aukštis
21.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.