Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Serija
OptiMOS™ -T2
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
9.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
2.41mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 855,00
€ 0,342 Each (On a Reel of 2500) (be PVM)
€ 1 034,55
€ 0,414 Each (On a Reel of 2500) (su PVM)
2500

€ 855,00
€ 0,342 Each (On a Reel of 2500) (be PVM)
€ 1 034,55
€ 0,414 Each (On a Reel of 2500) (su PVM)
2500

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Patikrinkite dar kartą.
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Serija
OptiMOS™ -T2
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
9.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
2.41mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.